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参数资料
| 型号： | MTP2955VG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 205K |
| 代理商： | MTP2955VG |
MTP2955V
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
50
75
100
125
VGS = 15 V
SINGLE PULSE
TC = 25°C
ID = 12 A
1.0
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1.0
100
0.1
0
75
25
10
1.0
0.1
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
dc
100 ms
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
50
0.02
175
100
125
150
175
200
225
相关PDF资料 |
PDF描述 |
|---|---|
| MTP2955VS62Z | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N40E | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N40 | 2 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N35 | 2 A, 350 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N45 | 2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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参数描述 |
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| MTP2H-E10-C39 | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP2H-E6-C | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
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