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参数资料
| 型号： | MTP3055VL |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A TO-220AB |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP3055VLOS |
MTP3055VL
Preferred Device
Power MOSFET
12 Amps, 60 Volts, Logic
Level
N ? Channel TO ? 220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
12 AMPERES
60 VOLTS
R DS(on) = 180 m Ω
N ? Channel
D
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1.0 M Ω )
Symbol
V DSS
V DGR
Value
60
60
Unit
Vdc
Vdc
G
S
Gate ? Source Voltage
? Continuous
? Single Pulse (t p ≤ 50 μ s)
V GS
V GSM
± 15
± 20
Vdc
Vpk
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain Current ? Continuous @ 25 ° C
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 μ s)
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
I D
I D
I DM
P D
12
8.0
42
48
0.32
Adc
Apk
Watts
W/ ° C
4
TO ? 220AB
4
Drain
Operating and Storage Temperature
Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L = 12 Apk, L = 1.0 mH, R G =25 Ω )
T J , T stg
E AS
? 55 to
175
72
° C
mJ
1
2
3
CASE 221A
STYLE 5
MTP3055VL
LLYWW
1
Gate
3
Source
Thermal Resistance
? Junction to Case
? Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10
seconds
R θ JC
R θ JA
T L
3.13
62.5
260
° C/W
° C
MTP3055VL
LL
Y
WW
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTP3055VL
Package
TO ? 220AB
Shipping
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 4
1
Publication Order Number:
MTP3055VL/D
相关PDF资料 |
PDF描述 |
|---|---|
| MTP3055VL | MOSFET N-CH 60V 12A TO-220 |
| MTP3055V | MOSFET N-CH 60V 12A TO-220AB |
| MTP36N06V | MOSFET N-CH 60V 32A TO-220AB |
| MTP50P03HDL | MOSFET P-CH 30V 50A TO-220AB |
| MTPD1346-010 | PIN DIODE 1300NM FLAT 2.8MM TO46 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3055VL | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 60V 12A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 12A, TO-220 |
| MTP3055VL_Q | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP30N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| MTP30N08M | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP30P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
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