参数资料
型号: MTP3055VL
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 3/7页
文件大小: 201K
代理商: MTP3055VL
MTP3055VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
5
0
8
16
24
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
4.0
5.0
6.0
0
4
8
16
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
04
8
12
16
24
0.02
0.14
0.26
0.32
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
4
12
16
20
24
0.07
0.12
0.17
0.22
0.27
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.5
1.0
1.5
010
20
40
50
60
0.1
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VGS = 10 V
5 V
4.5 V
3 V
2.5 V
3.5 V
VGS = 5 V
TJ = 100°C
25°C
55°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 10 V
5 V
VGS = 0 V
TJ = 125°C
4
12
20
4
12
20
8
30
4 V
2.5
3.5
4.5
5.5
0.20
0.08
1.0
10
2.0
VGS = 5 V
ID = 6 A
100°C
175
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MTP3055V 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相关代理商/技术参数
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