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参数资料
| 型号： | MTP30P06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 204K |
| 代理商： | MTP30P06V |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 6
1
Publication Order Number:
MTP30P06V/D
MTP30P06V
Preferred Device
Power MOSFET
30 Amps, 60 Volts
PChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Package is Available*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 ms)
ID
IDM
30
19
105
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
PD
125
0.83
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg 55 to 175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 30 Apk, L = 1.0 mH, RG = 25 W)
EAS
450
mJ
Thermal Resistance JunctiontoCase
Thermal Resistance JunctiontoAmbient
RqJC
RqJA
1.2
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
S
G
PChannel
30 AMPERES, 60 VOLTS
RDS(on) = 80 mW
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP30P06V
TO220AB
50 Units/Rail
http://onsemi.com
MTP30P06VG
TO220AB
(PbFree)
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAM
AND PIN ASSIGNMENT
MTP30P06V = Device Code
A
= Location Code
Y
= Year
WW
= Work Week
G
= PbFree Package
MTP30P06VG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
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| MTP33N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
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