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参数资料
| 型号： | MTP30P06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 204K |
| 代理商： | MTP30P06V |
MTP30P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
024
68
10
0
10
20
30
60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
1
234
8
0
10
20
30
60
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
010
20
30
40
50
0
0.02
0.04
0.06
0.12
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
1020
3040
70
1
50
10
100
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100
°C
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100°C
TJ = 100°C
25
°C
55
°C
VGS = 0 V
VGS = 10V
VGS = 10 V
40
50
12
7 V
6 V
5 V
4 V
8 V
9 V
40
50
56
7
0.08
0.1
60
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
010
20
30
40
60
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
15 V
TJ = 25°C
VGS = 10 V
0.06
0.07
50
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0
0.2
0.4
0.6
1.8
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
150
VGS = 10 V
ID = 15 A
0.8
1
1.2
1.4
1.6
125
175
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