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参数资料
| 型号： | MTP30P06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 204K |
| 代理商： | MTP30P06V |
MTP30P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
62
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.6
5.3
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
0.067
0.08
W
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
VDS(on)
2.0
2.9
2.8
Vdc
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
gFS
5.0
7.9
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
1562
2190
pF
Output Capacitance
Coss
524
730
Transfer Capacitance
Crss
154
310
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 W)
td(on)
14.7
30
ns
Rise Time
tr
25.9
50
TurnOff Delay Time
td(off)
98
200
Fall Time
tf
52.4
100
Gate Charge (See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc)
QT
54
80
nC
Q1
9.0
Q2
26
Q3
20
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
2.3
1.9
3.0
Vdc
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
175
ns
ta
107
tb
68
Reverse Recovery Stored Charge
QRR
0.965
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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