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参数资料
| 型号： | MTP50N03HDL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 71K |
| 代理商： | MTP50N03HDL |
MTP50P03HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk ≥ 2.0) (Note 3.)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
26
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
10
Adc
Gate–Body Leakage Current
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(Cpk ≥ 3.0) (Note 3.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
4.0
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk ≥ 3.0) (Note 3.)
(VGS = 5.0 Vdc, ID = 25 Adc)
RDS(on)
–
0.020
0.025
Ohm
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ = 125°C)
VDS(on)
–
0.83
–
1.5
1.3
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 25 Adc)
gFS
15
20
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
3500
4900
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
1550
2170
Transfer Capacitance
f = 1.0 MHz)
Crss
–
550
770
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
22
30
ns
Rise Time
(VDD = 15 Vdc, ID = 50 Adc,
VGS =50Vdc
tr
–
340
466
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 2.3 )
td(off)
–
90
117
Fall Time
RG = 2.3 )
tf
–
218
300
Gate Charge
(S
Fi
8)
QT
–
74
100
nC
g
(See Figure 8)
(VDS = 24 Vdc, ID = 50 Adc,
Q1
–
13.6
–
(VDS 24 Vdc, ID 50 Adc,
VGS = 5.0 Vdc)
Q2
–
44.8
–
Q3
–
35
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS =50 Adc, VGS = 0 Vdc)
(IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
2.39
1.84
3.0
–
Vdc
Reverse Recovery Time
(S
Fi
15)
trr
–
106
–
ns
y
(See Figure 15)
(IS = 50 Adc, VGS = 0 Vdc,
ta
–
58
–
(IS 50 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
–
48
–
Reverse Recovery Stored Charge
QRR
–
0.246
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
3.5
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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