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参数资料
| 型号： | MTP50N03HDL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 71K |
| 代理商： | MTP50N03HDL |
MTP50P03HDL
http://onsemi.com
7
Figure 14. Thermal Response
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
t, TIME (s)
Figure 15. Diode Reverse Recovery Waveform
1.0E-05
1.0E-04
1.0E-02
1.0E-03
0.1
1.0E+00
1.0E+01
0.1
1.0
0.01
0.1
0.2
0.02
0.05
0.01
SINGLE PULSE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
1.0E-01
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相关代理商/技术参数 |
参数描述 |
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| MTP50N05E | 制造商:Motorola Inc 功能描述: 制造商:Texas Instruments 功能描述: |
| MTP50N05EW | 制造商:Motorola Inc 功能描述:50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP50N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
| MTP50N06EL | 制造商:ON Semiconductor 功能描述: |
| MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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