参数资料
型号: MTP50N03HDL
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 3/8页
文件大小: 71K
代理商: MTP50N03HDL
MTP50P03HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
20
60
100
80
40
4.5 V
TJ = 25°C
5 V
0
20
40
80
100
60
1.5
1.9
2.3
2.7
3.5
4.3
3.1
3.9
VDS ≥ 10 V
100°C
25°C
TJ = -55°C
0.015
0.017
0.021
0.025
0.029
0.027
0.023
0.019
0
2040
6080
100
VGS = 5.0 V
TJ = 100°C
-55°C
25°C
0
2040
6080
100
0.016
0.018
0.020
0.022
0.021
0.019
0.017
0.015
TJ = 25°C
10 V
VGS = 5 V
-50
-25
0
25
50
75
100
125
150
0.85
1.05
1.35
0.95
1.25
VGS = 10 V
8 V
6 V
VGS = 5 V
ID = 25 A
4 V
3.5 V
3 V
2.5 V
1.15
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
0
5
10
20
25
30
100
1000
15
VGS = 0 V
TJ = 125°C
100°C
10
相关PDF资料
PDF描述
MTP50N06EU 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP50N06EN 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP50N06E16 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N10EWC 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N10EUA 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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