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参数资料
| 型号： | MTP52N06VLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 82K |
| 代理商： | MTP52N06VLG |
MTP52N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk
≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = .25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
65
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.5
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk
≥ 2.0) (Note 3)
(VGS = 5 Vdc, ID = 26 Adc)
RDS(on)
0.022
0.025
W
DraintoSource OnVoltage
(VGS = 5 Vdc, ID = 52 Adc)
(VGS = 5 Vdc, ID = 26 Adc, TJ = 150°C)
VDS(on)
1.6
1.4
Vdc
Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)
gFS
17
30
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
1900
2660
pF
Output Capacitance
Coss
550
770
Transfer Capacitance
Crss
170
340
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 52 Adc,
VGS = 5 Vdc, RG = 9.1 W)
td(on)
15
30
ns
Rise Time
tr
500
1000
TurnOff Delay Time
td(off)
100
200
Fall Time
tf
200
400
Gate Charge (See Figure 8)
(VDS = 48 Vdc, ID = 52 Adc, VGS = 5 Vdc)
QT
62
90
nC
Q1
4.0
Q2
31
Q3
16
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc,
TJ = 150 °C)
VSD
1.03
0.9
1.5
Vdc
Reverse Recovery Time
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
104
ns
ta
63
tb
41
Reverse Recovery Stored Charge
QRR
0.28
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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