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参数资料
| 型号： | MTP52N06VLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 82K |
| 代理商： | MTP52N06VLG |
MTP52N06VL
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 15 V
SINGLE PULSE
TC = 25°C
150
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10
1000
1
0
450
250
150
350
100
10 ms
100 ms
1ms
10ms
dc
50
ID = 52 A
175
400
200
100
300
t, TIME (s)
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
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PDF描述 |
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| MTP52N06V | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| MTP5P18 | 5 A, 180 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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参数描述 |
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| MTP55N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
| MTP55N06Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
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