参数资料
型号: MTP52N06VLG
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, CASE 221A-09, 3 PIN
文件页数: 3/7页
文件大小: 82K
代理商: MTP52N06VLG
MTP52N06VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
7 V
8 V
5 V
4 V
3 V
100
80
60
40
20
0
2
0
1.0
5
3
2.5
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 5 V
20
0
.030
0
40
60
80
100
TJ = 100°C
25°C
55°C
TJ = 25°C
.040
0
VGS = 5 V
10 V
VGS = 5 V
ID = 26 A
1.6
1.4
1
0.6
0.4
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1
0
1020
30405060
468
10
100
80
60
40
20
0
24
6
1.5
.020
.010
.030
.020
.010
20
40
60
80
110
100
10
100°C
175
1.8
110
90
70
50
30
10
13
57
9
90
70
50
30
10
110
3.5
4.5
5.5
0.5
30
10
50
70
90
110
.035
.025
.015
.005
10
30
50
70
90
1.2
0.8
6 V
.060
.050
.040
100
0.2
0
1000
.070
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