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Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistor
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) *
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 8.0
Vdc
Drain Current — Continuous @ TA = 25°C (2)
Drain Current — Continuous @ TA = 70°C (2)
Drain Current — Pulsed Drain Current (3)
ID
IDM
1.8
1.6
14.4
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
PD
1.8
14.3
Watts
mW/
°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
0.78
6.25
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
THERMAL RESISTANCE
Rating
Symbol
Typ.
Max.
Unit
Thermal Resistance — Junction to Ambient, PCB Mount (1)
Thermal Resistance — Junction to Ambient, PCB Mount (2)
R
θJA
R
θJA
55
125
70
160
°C/W
* Negative signs for P–Channel device omitted for clarity.
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
AB
Device
Reel Size
Tape Width
Quantity
AB
MTSF1P02HDR2
13
″
12 mm embossed tape
4000 units
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
Order this document
by MTSF1P02HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
MTSF1P02HD
SINGLE TMOS
POWER FET
1.8 AMPERES
20 VOLTS
RDS(on) = 0.16 OHM
Motorola Preferred Device
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
CASE 846A–02, Style 1
Micro8