参数资料
型号: MTSF1P02HDR2
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 6/12页
文件大小: 342K
代理商: MTSF1P02HDR2
MTSF1P02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1.2
1.6
0.4
2
0.8
0
0.4
0.8
2
0
1.2
1.6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0.4
0.8
1.2
1.6
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2
4
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1
1.5
2
0.1
0.16
0.18
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
2.0
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 0 V
VGS = 4.5 V
ID = 1.8 A
TJ = 25°C
4.5 V
VGS = 2.7 V
ID = 1.8 A
1.2
2.7 V
2 V
1.8 V
1.6 V
0.4
1.6
6
8
2.7 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
2
0.14
0.5
0.8
1.0
1.5
0
4
8
12
20
1.7 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0.12
10
100
°C
1.9 V
1.5 V
1.4 V
25
°C
16
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