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参数资料
| 型号： | MTSF1P02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 5/12页 |
| 文件大小： | 342K |
| 代理商： | MTSF1P02HDR2 |
MTSF1P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
12.8
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
—
0.8
2.5
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(3)
(VGS = 4.5 Vdc, ID = 1.8 Adc)
(VGS = 2.7 Vdc, ID = 0.9 Adc)
RDS(on)
—
120
160
190
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.9 Adc)
(1)
gFS
2.0
4.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
440
—
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
300
—
Transfer Capacitance
f = 1.0 MHz)
Crss
—
150
—
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (1)
td(on)
—
15
—
ns
Rise Time
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (1)
tr
—
35
—
Turn–Off Delay Time
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (1)
td(off)
—
55
—
Fall Time
tf
—
75
—
Turn–On Delay Time
(VDD = 10 Vdc, ID = 0.9 Adc,
VGS = 2.7 Vdc, RG = 6.0 ) (1)
td(on)
—
20
—
Rise Time
(VDD = 10 Vdc, ID = 0.9 Adc,
VGS = 2.7 Vdc, RG = 6.0 ) (1)
tr
—
93
—
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 0.9 Adc,
VGS = 2.7 Vdc, RG = 6.0 ) (1)
td(off)
—
50
—
Fall Time
tf
—
75
—
Gate Charge
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc)
QT
—
11
22
nC
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc)
Q1
—
0.7
—
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc)
Q2
—
5.5
—
Q3
—
3.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.8 Adc, VGS = 0 Vdc) (1)
(IS = 1.8 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1.24
0.9
2.0
—
Vdc
Reverse Recovery Time
(IS = 1.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
trr
—
120
—
ns
(IS = 1.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
ta
—
33
—
(IS = 1.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
tb
—
87
—
Reverse Recovery Stored Charge
QRR
—
0.223
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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相关代理商/技术参数 |
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| MTSF2P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
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| MTSF2P03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述: |
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