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参数资料
| 型号： | MTW10N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 183K |
| 代理商： | MTW10N100E |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTW10N100E/D
MTW10N100E
Preferred Device
Power MOSFET
10 Amps, 1000 Volts
NChannel TO247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transient.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
1000
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
10
6.2
30
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
250
2.0
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 10 Apk, L = 10 mH, RG = 25 )
EAS
500
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.50
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
MTW10N100E
Device
Package
Shipping
ORDERING INFORMATION
MTW10N100E
TO247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO247AE
CASE 340K
Style 1
NChannel
S
10 AMPERES
1000 VOLTS
RDS(on) = 1.3
1
2
3
4
1
Gate
3
Source
4
Drain
2
Drain
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