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参数资料
| 型号： | MTW10N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 183K |
| 代理商： | MTW10N100E |
MTW10N100E
http://onsemi.com
6
SAFE OPERATING AREA
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
0.1
10
100 s
1 ms
10 ms
dc
10 s
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
1.0
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
1.0E05
1.0E04
1.0E02
0.1
1.0
0.01
1.0E03
1.0E01
1.0E+100
0.2
0.1
1.0E+01
VGS = 20 V
SINGLE PULSE
TC = 25°C
50
100
125
75
500
400
300
100
200
ID = 10 A
D = 0.5
0.02
0.01
0.05
SINGLE PULSE
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