- 您现在的位置：买卖IC网 > PDF目录96107 > MTW10N100E (ON SEMICONDUCTOR) 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE PDF资料下载
参数资料
| 型号： | MTW10N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 183K |
| 代理商： | MTW10N100E |
MTW10N100E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
0
6
12 14
22
30
20
12
2
8
18
26
4
5 V
6 V
VGS = 10 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 10 V
15 V
1.00
1.40
1.56
1.16
04
16
214
18
VGS = 0 V
0
300
700
1
1000
100000
200
500
1000
900
25°C
TJ = 125°C
0
4
12
16
0
0.8
1.6
2.4
2.0
1.2
0.4
818
20
TJ = 100°C
25°C
55°C
VGS = 10 V
50
0
0.8
1.2
2.0
2.8
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 5 A
4 V
16
8
0
10000
1.32
1.48
1.24
1.08
610
812
20
2.4
1.6
400
600
800
100
100°C
28
24
16
20
410
18
10
2
14
6
I D
,DRAIN
CURRENT
(AMPS)
20
12
4
16
8
0
18
10
2
14
6
5.6
6.0
26
14
10
0.4
10
相关PDF资料 |
PDF描述 |
|---|---|
| MTW15N25E | 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| MTW22N20E | 22 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| MTG20N20 | 20 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTG9N50E | 9 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTG4N100E | 4 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW10N40E | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
| MTW14N50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM |
| MTW1551212 | 制造商:TDK-Lambda Corporation 功能描述:AC/DC Power Supply Triple-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 11-Pin 制造商:TDK-Lambda Corporation 功能描述:AC/DC PS TRIPLE-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 13PIN - Bulk 制造商:TDK 功能描述:AC/DC CONVERT 5V +/-12V 15W 制造商:TDK-Lambda 功能描述:AC/DC Power Supply Triple-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 11-Pin |
| MTW15-51212 | 功能描述:线性和开关式电源 16W 5V 12V 2A -12V/0.2A RoHS:否 制造商:TDK-Lambda 产品:Switching Supplies 开放式框架/封闭式:Enclosed 输出功率额定值:800 W 输入电压:85 VAC to 265 VAC 输出端数量:1 输出电压（通道 1）:20 V 输出电流（通道 1）:40 A 商用/医用: 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:Rack 长度: 宽度: 高度: |
| MTW1551212/V | 制造商:TDK-Lambda Corporation 功能描述:5V, 12, -12V - Bulk |
发布紧急采购，3分钟左右您将得到回复。