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参数资料
| 型号： | MTW32N25E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 62K |
| 代理商： | MTW32N25E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MTW32N25E/D
MTW32N25E
Preferred Device
Power MOSFET
32 Amps, 250 Volts
N–Channel TO–247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
250
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
250
Vdc
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
32
25
96
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
250
2.0
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 3.0 mH, RG = 25 )
EAS
600
mJ
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
R
θJC
R
θJA
0.50
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Device
Package
Shipping
ORDERING INFORMATION
MTW32N25E
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MTW32N25E
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO–247AE
CASE 340K
Style 1
N–Channel
S
32 AMPERES
250 VOLTS
RDS(on) = 80 m
1
2
3
4
1
Gate
3
Source
4
Drain
2
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| MTW35N15EG | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW35N15E | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW45N10E | 45 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW7N80E | 7 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTY100N10E | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW33N10E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MTW45N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| MTW45N10E | 制造商:Rochester Electronics LLC 功能描述: |
| MTW4N80 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
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