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参数资料
| 型号： | MTW45N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 62K |
| 代理商： | MTW45N10E |
MTW45N10E
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1000
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1000
600
400
200
ID = 45 A
800
100
10
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100 s
1 ms
10 ms
DC
0.2
0.02
0.1
D = 0.5
0.05
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0
0.01
0.1
SINGLE PULSE
0.01
10 s
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