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参数资料
| 型号： | MTW6N100EG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 1000 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | GREEN, CASE 340K-01, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 208K |
| 代理商： | MTW6N100EG |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MTW6N100E/D
MTW6N100E
Preferred Device
Power MOSFET
6 Amps, 1000 Volts
NChannel TO247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
1000
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
6.0
4.2
18
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
180
1.43
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 27.77 mH, RG = 25 Ω)
EAS
720
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.70
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Device
Package
Shipping
ORDERING INFORMATION
MTW6N100E
TO247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MTW6N100E
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO247AE
CASE 340K
Style 1
NChannel
S
6 AMPERES
1000 VOLTS
RDS(on) = 1.5 Ω
1
2
3
4
1
Gate
3
Source
4
Drain
2
Drain
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| MUN2212 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW6N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
| MTW7N80E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTW8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW8N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTW8N60E/D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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