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参数资料
| 型号： | MTW6N100EG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 1000 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | GREEN, CASE 340K-01, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 208K |
| 代理商： | MTW6N100EG |
MTW6N100E
http://onsemi.com
6
SAFE OPERATING AREA
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
0.1
10
100 μs
1 ms
10 ms
dc
10 μs
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
1.0
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
1.0E05
1.0E04
1.0E02
0.1
1.0
0.01
1.0E03
1.0E01
1.0E+00
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
1.0E+01
700
VGS = 20 V
SINGLE PULSE
TC = 25°C
50
100
125
75
600
500
400
300
100
200
ID = 6 A
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW6N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
| MTW7N80E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTW8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW8N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTW8N60E/D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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