- 您现在的位置：买卖IC网 > PDF目录97629 > MTW6N100EG (ON SEMICONDUCTOR) 6 A, 1000 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE PDF资料下载
参数资料
| 型号： | MTW6N100EG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 1000 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | GREEN, CASE 340K-01, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 208K |
| 代理商： | MTW6N100EG |
MTW6N100E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
1,270
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
1.28
1.5
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
VDS(on)
8.0
14.4
12.6
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc)
gFS
4.0
7.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
3000
4210
pF
Output Capacitance
Coss
219
440
Reverse Transfer Capacitance
Crss
43
90
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 500 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
27
45
ns
Rise Time
tr
29
65
TurnOff Delay Time
td(off)
93
170
Fall Time
tf
43
95
Gate Charge
(See Figure 8)
(VDS = 800 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
QT
66
100
nC
Q1
12.5
Q2
25.9
Q3
26
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.808
0.64
1.0
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
735
ns
ta
188
tb
547
Reverse Recovery Stored
Charge
QRR
4.7
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MUN2112 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN2214 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MUN2212 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MUN2213 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MUN2211 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW6N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
| MTW7N80E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTW8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW8N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTW8N60E/D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
发布紧急采购，3分钟左右您将得到回复。