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| 型号： | MTY100N10E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 100A TO-264 |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 25 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 378nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10640pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
| 其它名称： | MTY100N10EOS |
MTY100N10E
Preferred Device
Power MOSFET
100 Amps, 100 Volts
N ? Channel TO ? 264
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain ? to ? source diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
100 AMPERES
100 VOLTS
R DS(on) = 11 m Ω
N ? Channel
D
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1 M Ω )
Symbol
V DSS
V DGR
Value
100
100
Unit
Vdc
Vdc
G
S
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 ms)
Drain Current ? Continuous @ T C = 25 ° C
Drain Current ? Single Pulse (t p ≤ 10 μ s)
Total Power Dissipation
Derate above 25 ° C
Operating and Storage Temperature Range
V GS
V GSM
I D
I DM
P D
T J , T stg
± 20
± 40
100
300
300
2.38
? 55 to
150
Vdc
Vpk
Adc
Apk
Watts
W/ ° C
° C
1
2
3
TO ? 264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 80 Vdc, V GS = 10 Vdc, Peak
I L = 100 Apk, L = 0.1 mH, R G = 25 Ω )
Thermal Resistance ? Junction to Case
Thermal Resistance ? Junction to Ambient
E AS
R θ JC
R θ JA
250
0.42
40
mJ
° C/W
MTY100N10E
LLYWW
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
1
Gate
3
Source
2
Drain
LL
Y
WW
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTY100N10E
Package
TO ? 264
Shipping
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 4
1
Publication Order Number:
MTY100N10E/D
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相关代理商/技术参数 |
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| MTY10N100E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
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| MTY14N100 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY14N100E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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