参数资料
型号: MTY100N10E
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 100V 100A TO-264
产品变化通告: Product Discontinuation 30/Jun/2004
标准包装: 25
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 378nC @ 10V
输入电容 (Ciss) @ Vds: 10640pF @ 25V
功率 - 最大: 300W
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
供应商设备封装: TO-264
包装: 管件
其它名称: MTY100N10EOS
MTY100N10E
TYPICAL ELECTRICAL CHARACTERISTICS
200
160
V GS = 10 V
9V
8V
T J = 25 ° C
7V
120
100
V DS ≥ 10 V
80
120
60
80
6V
40
40
5V
20
100 ° C
T J = ? 55 ° C
25 ° C
0
0
2
4
6
8
10
0
2
3
4
5
6
7
8
9
10
0.018
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.011
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.016
V GS = 10 V
T J = 100 ° C
0.0105
T J = 25 ° C
V GS = 10 V
0.014
0.012
25 ° C
0.01
0.0095
0.01
0.009
15 V
0.008
? 55 ° C
0.0085
0.006
0
50
100
150
200
0.008
0
50
100
150
200
1.8
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
and Temperature
V GS = 10 V
1000000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
1.6
I D = 50 A
100000
T J = 125 ° C
1.4
1.2
1
1000
100
100 ° C
0.8
10
25 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
1
0
20
40
60
80
100
120
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage
Current versus Voltage
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