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参数资料
| 型号： | MTY14N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | CASE 340G-02, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MTY14N100E |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls, and
other inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
1000
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
1000
Vdc
Gate–to–Source Voltage — Continuous
— Single Pulse (tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ TC = 100°C
— Single Pulse (tp ≤ 10 s)
ID
IDM
14
8.7
49
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
300
2.4
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 14 Apk, L = 10 mH, RG = 25 )
EAS
980
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
0.42
30
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTY14N100E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
MTY14N100E
TMOS POWER FET
14 AMPERES
1000 VOLTS
RDS(on) = 0.80 OHM
CASE 340G–02, STYLE 1
TO–264
Motorola Preferred Device
D
S
G
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