参数资料
型号: MUBW35-12A8
厂商: IXYS
文件页数: 1/8页
文件大小: 0K
描述: MODULE IGBT CBI E3
标准包装: 5
IGBT 类型: NPT
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 3.1V @ 15V,35A
电流 - 集电极 (Ic)(最大): 50A
电流 - 集电极截止(最大): 1.1mA
Vce 时的输入电容 (Cies): 1.65nF @ 25V
功率 - 最大: 225W
输入: 三相桥式整流器
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: E3
供应商设备封装: E3
MUBW 35-12 A8
Converter - Brake - Inverter Module (CBI3)
21
22
D11
1
D13
2
D15
3
7
D7
T1
16
15
D1
6
T3
18
17
D3
5
T5
20
19
D5
4
D12
D14
D16
T7
T2
D2
T4
D4
T6
D6
E72873
14
11
12
13
See outline drawing for pin arrangement
23
24
10
NTC
8
9
Three Phase
Rectifier
V RRM = 1600 V
Brake Chopper
V CES = 1200 V
Three Phase
Inverter
V CES = 1200 V
I FAVM = 42 A
I C25
= 35 A
I C25
= 50 A
I FSM
= 300 A
V CE(sat) = 2.3 V
V CE(sat) = 2.5 V
Input Rectifier D11 - D16
Application: AC motor drives with
Symbol
Conditions
Maximum Ratings
Input from single or three phase grid
Three phase synchronous or
V RRM
1600
V
asynchronous motor
electric braking operation
I FAV
I DAVM
T C = 80°C; sine 180°
T C = 80°C; rectangular; d = 1/3; bridge
30
80
A
A
Features
I FSM
P tot
T VJ = 25°C; t = 10 ms; sine 50 Hz
T C = 25°C
300
100
A
W
High level of integration - only one power
semiconductor module required for the
whole drive
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
V F
I F = 35 A; T VJ = 25°C
T VJ = 125°C
1.2
1.2
1.4
V
V
copper base plate and soldering pins for
PCB mounting
Temperature sense included
I R
V R = V RRM ; T VJ = 25°C
T VJ = 125°C
0.4
0.02
mA
mA
R thJC
(per diode)
1.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-8
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