参数资料
型号: MUN2112T3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-59, 3 PIN
文件页数: 36/38页
文件大小: 385K
代理商: MUN2112T3
MUN2111T1 SERIES
2–737
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2114T1
10
1
0.1
0
10
203040
50
100
10
1
02
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6
8
10
15
20 2530
354045
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
in
,INP
U
T
V
OL
TA
G
E
(V
OL
TS)
I C
,COLLECT
OR
CURRENT
(mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020
40
60
80
V
CE(sat)
,MA
X
IM
U
M
COLLECT
OR
V
OL
TA
G
E
(V
OL
TS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
ob
,CAP
ACIT
ANCE
(pF
)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA = –25°C
75
°C
25
°C
TA =75°C
25
°C
–25
°C
VO = 5 V
VO = 0.2 V
TA = –25°C
25
°C
75
°C
IC/IB =10
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
1
10
100
IC, COLLECTOR CURRENT (mA)
–25
°C
25
°C
TA =75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
152040 50
607080
90
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相关代理商/技术参数
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MUN2113T1G 功能描述:开关晶体管 - 偏压电阻器 SS BR XSTR PNP 50V RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
MUN2113T3 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59