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参数资料
| 型号： | MUN2236T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 13/18页 |
| 文件大小： | 160K |
| 代理商： | MUN2236T1G |
MUN2211T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN2211T1, G
MUN2212T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN2213T1, G
MUN2240T1, G
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
MUN2236T1, G
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
MUN2237T1, G
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW)
MUN2241T1, G
VOL
-
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN2230T1, G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN2215T1, G
MUN2216T1, G
MUN2231T1, G
MUN2232T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
VOH
4.9
-
Vdc
Input Resistor
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R1
7.0
15.4
32.9
7.0
3.3
0.7
1.5
3.3
15.4
70
32.9
70
10
22
47
10
4.7
1.0
2.2
4.7
22
100
47
100
13
28.6
61.1
13
6.1
1.3
2.9
6.1
28.6
130
61.1
130
k
W
Resistor Ratio
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R1/R2
0.8
0.17
-
0.8
0.055
0.38
0.8
1.7
-
1.0
0.21
-
1.0
0.12
0.47
1.0
2.15
-
1.2
0.25
-
1.2
0.185
0.56
1.2
2.6
-
5. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
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| MUN2237 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN2237T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2237T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2238 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 2.2 k, R2 = k |
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