参数资料
型号: MUN2236T1G
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, CASE 318D-04, SC-59, 3 PIN
文件页数: 7/18页
文件大小: 160K
代理商: MUN2236T1G
MUN2211T1 Series
http://onsemi.com
15
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1
100
1
0.1
010
20
30
35
5
100
10
05
10
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10
15
20
25
30
35
40
45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 47. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
10
20
30
40
Figure 48. DC Current Gain
0.1
1
100
IC, COLLECTOR CURRENT (mA)
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
VCE = 10 V
1000
100
10
f = 1 MHz
lE = 0 V
TA = 25°C
TA =-25°C
25
°C
75
°C
75
°C
25
°C
TA =-25°C
VO = 5 V
VO = 0.2 V
TA =-25°C
25
°C
75
°C
V
CE(sat)
,COLLECT
OR
VOL
T
AGE
(VOL
TS)
IC/IB = 10
h
FE
,DC
CURRENT
GAIN
TA =-25°C
25
°C
75
°C
C
ob
,CAP
ACIT
ANCE
(pF)
5
4.5
15
20
25
30
35
40
1
0.1
I C
,COLLECT
OR
CURRENT
(mA)
15
25
10
V
in
,INPUT
VOL
T
AGE
(VOL
TS)
5
15
25
35
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