参数资料
型号: MURB1620CTTRLPBF
元件分类: 整流器
英文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
封装: D2PAK-3
文件页数: 2/8页
文件大小: 173K
代理商: MURB1620CTTRLPBF
MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. A 03/00
2
trr
Reverse Recovery Time
--
35
ns
IF = 1.0A, diF/dt = 50A/A, VR = 30V
--
25
IF = 0.5A, IR = 1.0A, IREC = 0.25A
-20
-
TJ = 25°C
34
TJ = 125°C
IRRM
Peak Recovery Current
-
1.7
-
A
TJ = 25°C
-
4.2
-
TJ = 125°C
Qrr
Reverse Recovery Charge
-
23
-
nC
TJ = 25°C
-75
-
TJ = 125°C
Parameters
Min
Typ
Max
Units
TJ
Max.JunctionTemperatureRange
-
- 65 to 175
°C
TStg
Max.StorageTemperatureRange
-
- 65 to 175
RthJC
Thermal Resistance, Junction to Case
Per Leg
-
3.0
RthJA
Thermal Resistance, Junction to Ambient
Per Leg
-
50
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
MountingTorque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
VBR, Vr
BreakdownVoltage,
200
-
V
IR = 100A
Blocking Voltage
VF
ForwardVoltage
-
0.975
V
IF = 8A
-
0.895
V
IF = 8A, TJ = 150°C
IR
ReverseLeakageCurrent
-
5
A
VR = VR Rated
-
250
A
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
25
-
pFVR = 200V
LS
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Thermal - Mechanical Characteristics
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
I
F = 8A
VR = 160V
diF /dt = 200A/s
Q Typical Socket Mount
R Mounting Surface, Flat, Smooth and Greased
R
Q
°C/W
Parameters
Min Typ Max Units Test Conditions
Parameters
Min Typ Max Units Test Conditions
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相关代理商/技术参数
参数描述
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