参数资料
型号: MURS160-E3/5BT
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件页数: 1/4页
文件大小: 87K
代理商: MURS160-E3/5BT
MURS140 & MURS160
Vishay General Semiconductor
Document Number: 88688
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
high
frequency
rectification
and
freewheeling application in switching mode converters
and
inverters
for
consumer,
computer
and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
400 V, 600 V
IFSM
35 A
trr
50 ns
VF
1.05 V
TJ max.
175 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MURS160
UNIT
Device marking code
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at (Fig. 1)
TL = 150 °C
TL = 125 °C
IF(AV)
1.0
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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