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参数资料
| 型号： | MURS160-E3/5BT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 87K |
| 代理商： | MURS160-E3/5BT |
MURS140 & MURS160
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88688
Revision: 27-Aug-07
2
Note:
(1) Pulse test: tp = 300 s pulse, duty cycle ≤ 2 %
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MURS140
MURS160
UNIT
Maximum instantaneous forward voltage (1)
IF = 1.0 A
TJ = 25 °C
TJ = 150 °C
VF
1.25
1.05
V
Maximum instantaneous reverse current at
rated DC blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR
5.0
150
A
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
50
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/s,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/s,
recovery to 1.0 V
tfr
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MURS160
UNIT
Typical thermal resistance, junction to ambient
RθJL
13
C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS160-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
MURS160-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
MURS160HE3/52T (1)
0.096
52T
750
7" diameter plastic tape and reel
MURS160HE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
0
2.0
3.0
4.0
5.0
6.0
0
25
50
75
100
125
150
175
1.0
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
1
100
10
Number of Cycles at 50 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MURS160-FN3 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V |
| MURS160HE3/2CT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURS160HE3/52T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURS160HE3/55T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURS160HE3/5BT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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