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参数资料
| 型号： | MURS340HE3/9AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 86K |
| 代理商： | MURS340HE3/9AT |
Document Number: 88816
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 23-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
MURS340, MURS360
Vishay General Semiconductor
New Product
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
400 V, 600 V
IFSM
125 A
trr
50 ns
VF
1.05 V
TJ max.
175 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS340
MURS360
UNIT
Device marking code
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at: (fig. 1)
TL = 130 °C
IF(AV)
3.0
A
TL = 115 °C
4.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MURS360HE3/57T | 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MBR20100CT-E3/4W | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20100CT-E3/4W | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H90CTHE3/45 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MURS340-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:3A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
| MURS340S | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Ultrafast Plastic Rectifier |
| MURS340S_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Ultrafast Plastic Rectifier |
| MURS340S-E3/52T | 功能描述:整流器 3.0 Amp 400V 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURS340S-E3/5BT | 功能描述:整流器 3.0 Amp 400V 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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