参数资料
型号: MVDF1N05ER2G
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 50V 2A 8-SOIC
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 300 毫欧 @ 1.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 12.5nC @ 10V
输入电容 (Ciss) @ Vds: 330pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
MMDF1N05E, MVDF1N05E
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0, I D = 250 m A)
Zero Gate Voltage Drain Current
(V DS = 50 V, V GS = 0)
Gate ? Body Leakage Current
(V GS = 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
50
?
?
?
?
?
?
2
100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (V DS = V GS , I D = 250 m Adc)
Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 1.5 Adc)
(V GS = 4.5 Vdc, I D = 0.6 Adc)
Forward Transconductance (V DS = 15 V, I D = 1.5 A)
V GS(th)
R DS(on)
R DS(on)
g FS
1.0
?
?
?
?
?
?
1.5
3.0
0.30
0.50
?
Vdc
W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
330
160
50
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
?
20
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 V, I D = 1.5 A, R L = 10 W ,
V G = 10 V, R G = 50 W )
t r
t d(off)
t f
?
?
?
?
?
?
30
40
25
Total Gate Charge
Gate ? Source Charge
Gate ? Drain Charge
(V DS = 10 V, I D = 1.5 A,
V GS = 10 V)
Q g
Q gs
Q gd
?
?
?
12.5
1.9
3.0
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C)
Forward Voltage (Note 2)
Reverse Recovery Time
(I S = 1.5 A, V GS = 0 V)
(dI S /dt = 100 A/ m s)
V SD
t rr
?
?
?
45
1.6
?
V
ns
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
相关PDF资料
PDF描述
MVDF2C03HDR2G MOSFET COMPL 30V 4.1A 8-SOIC
MVGSF1N03LT1G MOSFET N-CH 30V 1.6A SOT-23-3
MXR-505-915DR-B MODULE TRANSCEIVER 915MHZ 24DIP
NB-59S-09S-0 NEBULIZER UNIT 48V 30W
NB12KC0101KBA THERM NTC 100OHM 10% 0805 SMD
相关代理商/技术参数
参数描述
MVDF2C03HDR2G 功能描述:MOSFET COMPL 30V 4.1A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MVDILE 制造商:EATON MOELLER 功能描述:MECHANICAL INTERLOCK; Accessory Type:Mechanical Interlock; For Use With:Moeller DIL E Series Relays ;RoHS Compliant: Yes
MV-DILE 制造商:Moeller Electric Corporation 功能描述:
MVDILM 制造商:Moeller Electric Corporation 功能描述:
MVDK-2510 功能描述:固定接线端子 PCBVertDblLvl 5.08mm RoHS:否 制造商:Phoenix Contact 产品:Fixed Terminal Blocks 类型:Wire to Board 节距:5.08 mm 位置/触点数量:2 线规量程:26-16 电流额定值:13.5 A 电压额定值:250 V 安装风格:Through Hole 安装角:Straight 端接类型:Screw 触点电镀: