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| 型号： | MW6S010MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 657K |
| 描述： | MOSFET RF N-CH 28V 10W TO-270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 125mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270-2 |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this
part replacement. N suffix indicates RoHS compliant part.
MW6S010MR1 MW6S010GMR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
?
Typical Two-Tone Performance @ 960 MHz, VDD
= 28 Volts, I
DQ
=
125 mA, Pout
= 10 Watts PEP
Power Gain ? 18 dB
Drain Efficiency ? 32%
IMD ? -37 dBc
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
On-Chip RF Feedback for Broadband Stability
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
200°C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
61.4
0.35
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1.2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MW6S010
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
MW6S010MR1
MW6S010GMR1
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MW6S010MR1
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GMR1
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MW6S010NR1 | 功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
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