参数资料
型号: MW6S010MR1
厂商: Freescale Semiconductor
文件页数: 3/20页
文件大小: 657K
描述: MOSFET RF N-CH 28V 10W TO-270-2
标准包装: 500
晶体管类型: LDMOS
频率: 960MHz
增益: 18dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 125mA
功率 - 输出: 10W
电压 - 额定: 68V
封装/外壳: TO-270-2
供应商设备封装: TO-270-2
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MW6S010MR1 MW6S010GMR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS ? 450 MHz
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
500
400
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Broadband Performance @ Pout
= 3 Watts Avg.
?21
?6
?9
?12
?15
VDD= 28 Vdc, Pout
= 3 W (Avg.), I
DQ
= 150 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18.4
20.4
?65
37
34
31
28
?40
?45
?50
?55
η
D
, DRAIN
EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
25
?60
?18
20.2
20
19.8
19.6
19.4
19.2
19
18.8
18.6
410 420 430 440 450 460 470 480 490
ALT1
IRL
f, FREQUENCY (MHz)
Figure 17. 2-Carrier W-CDMA Broadband Performance @ Pout
= 7.5 Watts Avg.
ηD
?50
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
500
400
?14
?4
?6
?8
?10
16.5
19
?55
55
50
45
40
?30
?35
?40
?45
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
35
?12
18.8
18.5
18.3
18
17.8
17.5
17.3
17
16.8
410 420 430 440 450 460 470 480 490
S11
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
VDD= 28 Vdc
Pout
= 10 W
IDQ
= 150 mA
550 600
650
50
100 150 200 250 300 350 400 450 500
5
30
?25
0
?5
?15
?20
S11
S21
?10
25
20
15
10
S21
VDD= 28 Vdc, Pout
= 7.5 W (Avg.), I
DQ
= 150 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ALT1
ACPR
Gps
Figure 19. Single-Carrier N-CDMA ACPR, ALT1
and ALT2 versus Output Power
?80
Pout, OUTPUT POWER (WATTS) AVG.
?10
?20
?30
?40
?70
0.1 1 10
?50
ACPR
VDD= 28 Vdc, IDQ
= 150 mA,
f = 450 MHz, N?CDMA IS?95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
ALT1 & ALT2
,
CHANNEL POWER
(
dBc
)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
?60
ALT2
ALT1
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