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参数资料
| 型号： | MW6S010MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/20页 |
| 文件大小： | 657K |
| 描述： | MOSFET RF N-CH 28V 10W TO-270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 125mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270-2 |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
MW6S010MR1 MW6S010GMR1
19
RF Device Data
Freescale Semiconductor
ISSUE B
TO-270-2 GULL
PLASTIC
MW6S010GMR1
CASE 1265A-02
BOTTOM VIEW
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
SEATING
PLANE
H
PIN ONE ID
D
C
A
aaa
M
C
A
aaa
M
2X
b1
2X
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M?1994.
3. DATUM PLANE ?H? IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS ?D1" AND ?E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS ?D1" AND ?E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER?
MINED AT DATUM PLANE ?H?.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS ?A? AND ?B? TO BE DETERMINED AT
DATUM PLANE ?H?.
7. DIMENSIONS ?D" AND ?E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS ?D" AND ?E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER?
MINED AT DATUM PLANE ?D?.
c1
2X
E2
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.078 .082 1.98 2.08
INCHES
A1
.001 .004 0.02 0.10
A2
.077 .088 1.96 2.24
D
.416 .424 10.57 10.77
D1
.378 .382 9.60 9.70
D2
.290 .320 7.37 8.13
D3
.016 .024 0.41 0.61
E
.316 .324 8.03 8.23
E1
.238 .242 6.04 6.15
E2
.066 .074 1.68 1.88
E3
.150 .180 3.81 4.57
E4
.058 .066 1.47 1.68
L1
b1
.193 .199 4.90 5.06
c1
.007 .011 0.18 0.28
°°°°
aaa
.01 BSC
.004
0.25 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
e
2 8 2 8
L
.018 .024 4.90 5.06
DETAIL Y
C
B
bbb
M
L1
GAGEPLANE
L
A1
e
DETAIL Y
E5
E5
E5
.231 .235 5.87 5.97
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MW6S010NR1 | 功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
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