参数资料
型号: MWI100-06A8
厂商: IXYS
文件页数: 2/2页
文件大小: 0K
描述: MOD IGBT SIXPACK RBSOA 600V E3
标准包装: 5
IGBT 类型: NPT
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.5V @ 15V,100A
电流 - 集电极 (Ic)(最大): 130A
电流 - 集电极截止(最大): 1.2mA
Vce 时的输入电容 (Cies): 4.3nF @ 25V
功率 - 最大: 410W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: E3
供应商设备封装: E3
MWI 100-06 A8
Diodes
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
I F25
I F80
T C = 25°C
T C = 80°C
140
88
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 100 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 60 A; di F /dt = -500 A/μs; T VJ = 125°C
V R = 300 V; V GE = 0 V
1.9
1.4
28
100
2.1
V
V
A
ns
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.1 V; R 0 = 12 m Ω
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.15 V; R 0 = 2.5 m Ω
R thJC
(per diode)
0.61 K/W
Thermal Response
Module
Symbol
Conditions
Maximum Ratings
T VJ
T JM
T stg
V ISOL
M d
operating
I ISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
-40...+125
+150
-40...+125
2500
3-6
° C
° C
° C
V~
Nm
IGBT (typ.)
C th1 = 0.232 J/K; R th1 = 0.223 K/W
C th2 = 1.504 J/K; R th2 = 0.077 K/W
Free Wheeling Diode (typ.)
Symbol
Conditions
Characteristic Values
C th1 = 0.138 J/K; R th1 = 0.48 K/W
C th2 = 0.957 J/K; R th2 = 0.13 K/W
min. typ. max.
R pin-chip
1.8
m Ω
d S
d A
R thCH
Creepage distance on surface
Strike distance in air
with heatsink compound
10
10
0.01
mm
mm
K/W
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
300
g
Dimensions in mm (1 mm = 0.0394")
20070912a
2-2
相关PDF资料
PDF描述
MWI100-12A8 MOD IGBT SIXPACK RBSOA 1200V E3
MWI100-12E8 MOD IGBT SIXPACK RBSOA 1200V E3
MWI100-12T8T MOD IGBT TRENCH SIXPACK E3
MWI15-12A6K MOD IGBT RBSOA SIXPACK E1
MWI15-12A7 MOD IGBT SIXPACK RBSOA 1200V E2
相关代理商/技术参数
参数描述
MWI100-06A8T 功能描述:分立半导体模块 100 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI100-12A8 功能描述:分立半导体模块 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI100-12A8T 功能描述:分立半导体模块 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI100-12E8 功能描述:分立半导体模块 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI100-12T8T 功能描述:分立半导体模块 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: