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参数资料
| 型号： | MWI100-12E8 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIXPACK RBSOA 1200V E3 |
| 标准包装： | 5 |
| IGBT 类型： | NPT |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 165A |
| 电流 - 集电极截止（最大）： | 1.4mA |
| Vce 时的输入电容 (Cies)： | 7.4nF @ 25V |
| 功率 - 最大： | 640W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E3 |
| 供应商设备封装： | E3 |
MWI 100-12 E8
MKI 100-12 E8
IGBT Modules
I C25
= 165 A
V CES
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
13, 21
= 1200 V
V CE(sat) typ. = 2.0 V
1
5
9
1
9
2
3
6
7
10
11
19
17
15
2
3
10
11
19
15
E72873
4
14, 20
8
MWI
12
4
14, 20
12
MKI
See outline drawing for pin arrangement
IGBTs
Features
? NPT 3 IGBTs
Symbol
Conditions
Maximum Ratings
- low saturation voltage
V CES
V GES
I C25
I C80
I CM
V CEK
t SC
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 12 Ω ; T VJ = 125°C
RBSOA; clamped inductive load; L = 100 μH
V CE = 900 V; V GE = ± 15 V; R G = 12 Ω ; T VJ = 125°C
SCSOA; non-repetitive
1200
± 20
165
115
200
V CES
10
V
V
A
A
A
μs
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
? HiPerFRED TM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
? Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
P tot
T C = 25°C
640
W
Typical Applications
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
? MWI
- AC drives
- power supplies with power factor
V CE(sat)
V GE(th)
I C = 100 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 4 mA; V GE = V CE
4.5
2.0
2.3
2.5
6.5
V
V
V
correction
? MKI
- motor control
. DC motor amature winding
I CES
V CE = V CES ;
V GE = 0 V; T VJ = 25°C
T VJ = 125°C
1.4
1.4
mA
mA
. DC motor excitation winding
. synchronous motor excitation winding
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 100 A
V GE = ±15 V; R G = 12 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 150 A
330
15
750
45
12
10
7.4
0.76
400
nA
ns
ns
ns
ns
mJ
mJ
nF
μC
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
R thJC
(per IGBT)
0.19 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-4
相关PDF资料 |
PDF描述 |
|---|---|
| MWI100-12T8T | MOD IGBT TRENCH SIXPACK E3 |
| MWI15-12A6K | MOD IGBT RBSOA SIXPACK E1 |
| MWI15-12A7 | MOD IGBT SIXPACK RBSOA 1200V E2 |
| MWI150-06A8 | TRANS 16BIY 3-PH 600V 115AMP |
| MWI150-12T8T | MOD IGBT TRENCH SIXPACK E3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MWI100-12T8T | 功能描述:分立半导体模块 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI150-06A | 制造商:n/a 功能描述:IGBT Module |
| MWI150-06A8 | 功能描述:分立半导体模块 150 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI150-06A8T | 功能描述:分立半导体模块 150 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI150-12T8T | 功能描述:分立半导体模块 150 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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