参数资料
型号: MX29F1610
厂商: Macronix International Co., Ltd.
元件分类: DRAM
英文描述: The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
中文描述: 该CAT24FC02是一个2 KB的EEPROM的国内256个8位每字举办的串行CMOS
文件页数: 4/39页
文件大小: 669K
代理商: MX29F1610
4
P/N: PM0506
REV.1.7, JUN. 15, 2001
MX29F1610A
SYMBOL
A0 - A19
TYPE
INPUT
NAME AND FUNCTION
ADDRESS INPUTS: for memory addresses. Addresses are internally latched
during a write cycle.
LOW-BYTE DATA BUS: Input data and commands during Command Interface
Register(CIR) write cycles. Outputs array,status and identifier data in the
appropriate read mode. Floated when the chip is de-selected or the outputs are
disabled.
HIGH-BYTE DATA BUS: Inputs data during x 16 Data-Write operations. Outputs
array, identifier data in the appropriate read mode; not used for status register
reads. Floated when the chip is de-selected or the outputs are disabled
Selects between high-byte data INPUT/OUTPUT(BYTE = HIGH) and LSB
ADDRESS(BYTE = LOW)
CHIP ENABLE INPUTS: Activate the device's control logic, Input buffers,
decoders and sense amplifiers. With either CE1 or CE2 high, the device is de-
selected and power consumption reduces to Standby level upon completion of
any current program or erase operations. Both CE1,CE2 must be low to
select the device. CE2 is not provided in 44-pin SOP package.
All timing specifications are the same for both signals. Device selection occurs
with the latter falling edge of CE1 or CE2. The first rising edge of CE1 or CE2
disables the device.
POWER-DOWN: Puts the device in deep power-down mode. PWD is active low;
PWD high gates normal operation. PWD also locks out erase or program
operation when active low providing data protection during power transitions.
OUTPUT ENABLES: Gates the device's data through the output buffers during
a read cycle OE is active low.
WRITE ENABLE: Controls writes to the Command Interface Register(CIR).
WE is active low.
READY/BUSY: Indicates the status of the internal Write State Machine(WSM).
When low it indicates that the WSM is performing a erase or program operation.
RY/BY high indicate that the WSM is ready for new commands, sector erase is
suspended or the device is in deep power-down mode. RY/BY is always active
and does not float to tristate off when the chip is deselected or data output are
disabled.
WRITE PROTECT: All sectors can be protected by writing a non-volatile protect-
bit for each sector. When WP is low, all prottect-bits status can not be changed,
i.e., the user can not execute Sector Protection and Sector Unprotect. The WP
input buffer is disabled when PWD transitions low(deep power-down mode).
BYTE ENABLE: BYTE Low places device in x8 mode. All data is then input or
output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects between the high
and low byte. BYTE high places the device in x16 mode, and turns off the Q15/
A-1 input buffer. Address A0, then becomes the lowest order address.
DEVICE POWER SUPPLY(5V
±
10%)
GROUND
Q0 - Q7
INPUT/OUTPUT
Q8 - Q14
INPUT/OUTPUT
.Q15/A -1
INPUT/OUTPUT
CE1/CE2
INPUT
PWD
INPUT
OE
INPUT
WE
INPUT
RY/BY
OPEN DRAIN
OUTPUT
WP
INPUT
BYTE
INPUT
VCC
GND
Table1.PIN DESCRIPTIONS
相关PDF资料
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相关代理商/技术参数
参数描述
MX29F1610A 制造商:MCNIX 制造商全称:Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1610A-10 制造商:MCNIX 制造商全称:Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1610A-12 制造商:MCNIX 制造商全称:Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1610A-90 制造商:MCNIX 制造商全称:Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1610MC-10 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM