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参数资料
| 型号： | MX29LV640UXBC-90 |
| 厂商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63 |
| 封装： | 11 X 12 MM, 1.30 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP-63 |
| 文件页数： | 12/66页 |
| 文件大小： | 1142K |
| 代理商： | MX29LV640UXBC-90 |
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P/N:PM0744
REV. 1.0, OCT. 29, 2003
MX29LV640U
with in-circuit electrical erasure and programming. The
MX29LV640U uses a command register to manage this
functionality.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29LV640U uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
AUTOMATIC PROGRAMMING
The MX29LV640U is word programmable using the Au-
tomatic Programming algorithm. The Automatic Program-
ming algorithm makes the external system do not need
to have time out sequence nor to verify the data pro-
grammed. The typical chip programming time at room
temperature of the MX29LV640U is less than 48 sec-
onds.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to DATA polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 45 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29LV640U is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically pro-
grams the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are con-
trolled internally within the device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stand-
ard microprocessor write timings. The device will auto-
matically preprogram and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, relia-
bility, and cost effectiveness. The MX29LV640U electri-
cally erases all bits simultaneously using Fowler-Nord-
heim tunneling. The words are programmed by using
the EPROM programming mechanism of hot electron in-
jection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MX29LV800CBMC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1 M x 8 / 512 K x 16) 70 ns Parallel Flash - SOP-44 |
| MX29LV800CBMC-90G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 44SOP |
| MX29LV800CBMI-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP |
| MX29LV800CBTC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48 |
| MX29LV800CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48 |
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