参数资料
型号: N02L63W3AT25IT
厂商: ON Semiconductor
文件页数: 3/11页
文件大小: 0K
描述: IC SRAM 2MBIT 3V LP 44-TSOP
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 2M (128K x 16)
速度: 70ns
接口: 并联
电源电压: 2.3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 带卷 (TR)
N02L63W3A
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A16
Page
Address
Decode
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE
W E
OE
U B
Control
Logic
LB
Functional Description
L
L
CE
H
L
L
L
L
WE
X
X
L
H
H
OE
X
X
X 3
L
H
UB
X
H
1
L 1
X
LB
X
H
1
L 1
X
I/O 0 - I/O 151
High Z
High Z
Data In
Data Out
High Z
MODE
Standby 2
Active
Write 3
Read
Active
POWER
Standby
Active
Active
Active
Active
1. When UB and LB are in select mode (low), I/O 0 - I/O 15 are affected as shown. When LB only is in the select mode only I/O 0 - I/O 7
are affected as shown. When UB is in the select mode only I/O 8 - I/O 15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance 1
Item
Input Capacitance
Symbol
C IN
Test Condition
V IN = 0V, f = 1 MHz, T A =
25 o C
Min
Max
8
Unit
pF
I/O Capacitance
C I/O
V IN = 0V, f = 1 MHz, T A = 25 o C
8
pF
1. These parameters are verified in device characterization and are not 100% tested
Rev. 15 | Page 3 of 11 | www.onsemi.com
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