参数资料
型号: N02L63W3AT25IT
厂商: ON Semiconductor
文件页数: 5/11页
文件大小: 0K
描述: IC SRAM 2MBIT 3V LP 44-TSOP
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 2M (128K x 16)
速度: 70ns
接口: 并联
电源电压: 2.3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 带卷 (TR)
N02L63W3A
Power Savings with Page Mode Operation (WE = V IH )
Page Address (A4 - A16 )
Open page
Word Address (A0 - A3)
Word 1
Word 2
...
Word 16
CE
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Rev. 15 | Page 5 of 11 | www.onsemi.com
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