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参数资料
| 型号： | N08L63W2AB27I |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 70NS 48BGA |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 220 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 4M (256K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-BGA（6x8） |
| 包装： | 托盘 |
| 其它名称： | 766-1040 |
N08L63W2A
Absolute Maximum Ratings 1
Item
Voltage on any pin relative to V SS
Voltage on V CC Supply Relative to V SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V IN,OUT
V CC
P D
T STG
T A
T SOLDER
Rating
–0.3 to V CC +0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260 o C, 10sec
Unit
V
V
mW
o C
o C
o C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Symbol
V CC
V DR
V IH
V IL
Test Conditions
3
Chip Disabled
Min.
2.3
1.8
1.8
–0.3
Typ 1
3.0
Max
3.6
V CC +0.3
0.6
Unit
V
V
V
V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V OH
V OL
I LI
I LO
I OH = 0.2mA
I OL = -0.2mA
V IN = 0 to V CC
OE = V IH or Chip Disabled
V CC –0.2
0.2
0.5
0.5
V
V
μ A
μ A
Read/Write Operating Supply Current
@ 1 μ s Cycle Time 2
Read/Write Operating Supply Current
@ 70 ns Cycle Time 2
I CC1
I CC2
V CC =3.6 V, V IN =V IH or V IL
Chip Enabled, I OUT = 0
V CC =3.6 V, V IN =V IH or V IL
Chip Enabled, I OUT = 0
2.0
9.0
3.0
15.0
mA
mA
Page Mode Operating Supply Current
@ 70ns Cycle Time 2 (Refer to Power
Savings with Page Mode Operation
I CC3
V CC =3.6 V, V IN =V IH or V IL
Chip Enabled, I OUT = 0
2.0
3.0
mA
diagram)
Read/Write Quiescent Operating Sup-
ply Current 3
I CC4
V CC =3.6 V, V IN =V IH or V IL
Chip Enabled, I OUT = 0,
f=0
3.0
mA
V IN = V CC or 0V
Maximum Standby Current 3
Maximum Data Retention Current 3
I SB1
I DR
Chip Disabled
t A = 85 o C, V CC = 3.6 V
Vcc = 1.8V, V IN = V CC or 0
Chip Disabled, t A = 85 o C
4.0
20.0
10
μ A
μ A
1. Typical values are measured at Vcc=Vcc Typ., T A =25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Rev. 8 | Page 3 of 10 | www.onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N08L63W2AB27IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit |
| N08L63W2AB7I | 功能描述:静态随机存取存储器 8MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N08L63W2AB7IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit |
| N08M1618L1A | 制造商:AMI 制造商全称:AMI 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit |
| N08M1618L1AB | 制造商:AMI 制造商全称:AMI 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit |
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