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参数资料
| 型号： | NAND01GW3A2AN1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 27/57页 |
| 文件大小： | 916K |
| 代理商： | NAND01GW3A2AN1 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 15., Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to VDD + 2V for less than 20ns during transitions on I/O pins.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
s
Block Erase Time
2
3ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
–
50
125
°C
TSTG
Storage Temperature
–
65
150
°C
VIO
(1)
Input or Output Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
VDD
Supply Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
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| NAND01GW3A2AN1F | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3A2AN1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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