参数资料
型号: NAND01GW3A2AN1
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, TSOP-48
文件页数: 51/57页
文件大小: 916K
代理商: NAND01GW3A2AN1
55/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 44. Connection to Microcontroller, With Glue Logic
Figure 45. Building Storage Modules
RELATED DOCUMENTATION
STMicroelectronics has published a set of application notes to support the NAND Flash memories. They
are available from the ST Website
www.st.com. or from your local ST Distributor.
AI07589
R
W
I/O
E
AL
CL
CLK
D2
D1
D0
Q0
Q1
Q2
W
G
CSn
A3
A0
A1
A2
Microcontroller
NAND Flash
DQ
D flip-flop
AI08331
W
NAND Flash
Device 1
G
E1
CL
AL
NAND Flash
Device 3
NAND Flash
Device 2
NAND Flash
Device n+1
NAND Flash
Device n
E2
E3
En
En+1
I/O0-I/O7 or
I/O0-I/O15
RB
相关PDF资料
PDF描述
NAND01GW3A2AZB1E 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND01GW3A0CZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND01GW3A2BN6T 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GW3A2CN6T 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GW3A2AN1F 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND01GW3A2AN1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN6E 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040