参数资料
型号: NAND08GR3B3BZC6E
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63
文件页数: 22/59页
文件大小: 998K
代理商: NAND08GR3B3BZC6E
29/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 13. Status Register Bits
Note: 1. The SR6 bit and SR0 bit have a different meaning during Cache Program and Cache Read operations.
2. Only valid for Cache Program operations, for other operations it is same as SR6.
3. Only valid for Cache Program operations, for other operations it is Don’t Care.
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6(1)
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
Cache Ready/Busy
'1'
Cache Register ready (Cache Program only)
'0'
Cache Register busy (Cache Program only)
SR5
Program/ Erase/ Read
Controller(2)
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don’t Care
SR1
Cache Program Error(3)
'1'
Page N-1 failed in Cache Program operation
'0'
Page N-1 programmed successfully
SR0(1)
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
Cache Program Error
‘1’
Page N failed in Cache Program operation
‘0’
Page N programmed successfully
相关PDF资料
PDF描述
NAND08GR3B3CN1E 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND08GW4B2CZC1F 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GW4B3AZC6 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GW4B3BN1T 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND08GW4B3BN6E 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
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