收藏本站
参数资料
型号： NAND128W4A1AZA6T
厂商： NUMONYX
元件分类： PROM
英文描述： 8M X 16 FLASH 3V PROM, 10000 ns, PBGA55
封装： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-55
文件页数： 51/56页
文件大小： 882K
代理商： NAND128W4A1AZA6T
55/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
RELATED DOCUMENTATION
STMicroelectronics has published a set of application notes to support the NAND Flash memories. They
are available from the ST Website
www.st.com. or from your local ST Distributor.
REVISION HISTORY
Table 29. Document Revision History
Date
Version
Revision Details
06-Jun-2003
1.0
First Issue
07-Aug-2003
2.0
Design Phase
27-Oct-2003
3.0
Engineering Phase
03-Dec-2003
4.0
Document promoted from Target Specification to Preliminary Data status.
VCC changed to VDD and ICC to IDD.
Title of Table 2.. changed to “Product Description” and Page Program Typical Timing
for NANDXXXR3A devices corrected. Table 1., Product List, inserted on page 2.
13-Apr-2004
5.0
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program Operation, modified and note 2 modified. Note removed
for tWLWH timing in Table 20., AC Characteristics for Command, Address, Data Input.
Meaning of tBLBH4 modified, partly replaced by tWHBH1 and tWHRL min for 3V devices
modified in Table 21., AC Characteristics for Operations.
References removed from RELATED DOCUMENTATION section and reference
made to ST Website instead.
Figure 6., Figure 7., Figure 31. and Figure 34. modified. Read Electronic Signature
paragraph clarified and Figure 30., Read Electronic Signature AC Waveform,
modified. Note 2 to Figure 32., Read C Operation, One Page AC Waveform, removed.
Note 3 to Table 7., Address Insertion, x16 Devices removed. Only 00h Pointer
operations are valid before a Cache Program operation. IDD4 removed from Table
18., DC Characteristics, 1.8V Devices. Note added to Figure 34., Block Erase AC
Waveform. Small text changes.
28-May-2004
6.0
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added. Figure 19., Cache Program Operation modified.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in Table 28., Ordering Information Scheme.
02-Jul-2004
7.0
Cache Program removed from document. TFBGA55 package specifications added
(Figure 42., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package
Outline and Table 25., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch,
Package Mechanical Data).
Test
conditions
modified
for
VOL and VOH parameters in Table 19., DC
Characteristics, 3V Devices.
相关PDF资料
PDF描述
NAND128W4A3AN6E 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
NAND128W4A1AV6 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
NAND512R3M0BZBE SPECIALTY MEMORY CIRCUIT, PBGA107
NAND512W3A2SN6E 64M X 8 FLASH 3V PROM, PDSO48
NAND99R3M2AZBB5E SPECIALTY MEMORY CIRCUIT, PBGA107
相关代理商/技术参数
参数描述
NAND16GAH0HZA5E 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays
NAND16GAH0HZA5F 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel
NAND16GAHAPZO6E 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
NAND16GW3B6DPA6E 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
NAND16GW3B6DPA6F 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*