参数资料
型号: NAND128W4A2BZA1F
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
封装: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
文件页数: 17/57页
文件大小: 916K
代理商: NAND128W4A2BZA1F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
24/57
Figure 15. Sequential Row Read Operations
Figure 16. Sequential Row Read Block Diagrams
I/O
RB
Address Inputs
ai07597
1st
Page Output
Busy
tBLBH1
(Read Busy time)
00h/
01h/ 50h
Command
Code
2nd
Page Output
Nth
Page Output
Busy
tBLBH1
AI07598
Block
Area A
(1st half Page)
Read A Command, x8 Devices
Area B
(2nd half Page)
Area C
(Spare)
Area A
(main area)
Area C
(Spare)
Read A Command, x16 Devices
Read B Command, x8 Devices
Read C Command, x8/x16 Devices
Area A
Area A/ B
Area C
(Spare)
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
1st page
2nd page
Nth page
1st page
2nd page
Nth page
1st page
2nd page
Nth page
1st page
2nd page
Nth page
Block
相关PDF资料
PDF描述
NAND512W3A0AZA1E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3A2BN1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3A0AV1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND128R3A0CV6T 16M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W4A0AV1F 32M X 16 FLASH 3V PROM, 35 ns, PDSO48
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